transistor (npn) features z rf amplifier z high current transition frequency f t =550mhz(typ.), [v ce =6v, i e =-1ma] z low output capacitance : c ob =1.4pf(typ.) [v cb =6v, i e =0] z low base time constant and high gain z excellent noise response marking: 5345 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 20 ma p c collector power dissipation 300 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =5ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 4 v collector cut-off current i cbo v cb =30v, i e =0 0.5 a emitter cut-off current i ebo v eb =4v, i c =0 0.5 a dc current gain h fe v ce =6v, i c =1ma 40 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma 0.3 v transition frequency f t v ce =6v, i c =1ma 550 mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz 1.4 pf classification of h fe rank r o y range 40-80 70-140 120-240 sot-23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2SC5345 free datasheet http:///
2 www.htsemi.com semiconductor jinyu 2SC5345 free datasheet http:///
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